什么是半导体晶体管_什么是半导体晶体管
ShenzhenTonghuiTechnologyappliedforapatentforsemiconductortransistorperformancedetectionmethod,whichcanimprovesemiconductors...FinancialIndustryNewsonOctober31,2024,informationfromtheStateIntellectualPropertyOfficeshowedthatShenzhenTonghuiTechnologyCo.,Ltd.appliedforanamecalledPatentof"Propertydetectionmethod,detectiondeviceandstoragemediumofsemiconductortransistors",publicationnumberCN118837706A,applicationdateisAugust2024. 专利属于thatthatththatththatththatththattheratestothestothestotofectodeconductortertectodectectectectectectechnology，尤其是epropertiesofsemendoctiesofsemendonductortransistors...
taipeisciencienciencienthasobtatententsonthemethodofsemiconductordevicesandthe-the-themiconductortransistordevices，增加innumberofpatents...FinancialIndusNewsonMarch28,2024，根据TotheStateTateTateTateTateIntectIntectIntectalectectualProperperperpertyantercoirtiratiratirantirtratirationnibertiratirant.taiwanintrintEthodofformingasemicDuctorTransistordevice，授权annunounounununununununununununmbercn113517227b，applicationDateIS20212019。 专利showsamethodoformingasemicductortransistordevice。 theSthodincludesformingingafinShapeaboveThesubstrate...
＋﹏＋ Samsungappliedforapatentfornanosheettransistorsemiconductordevices,andsemiconductordevicescanincludesubstratesand...FinancialIndustryNewsonApril9,2024,accordingtotheannouncementoftheStateIntellectualPropertyOffice,SamsungElectronicsCo.,Ltd.appliedforapatentcalled"IncludingNanometers"Semiconductordeviceofchiptransistor",publicationnumberCN117855249A,applicationdateisSeptember2023.Thepatentsummaryshowsthatthesemiconductordevicemayinclude:asubstrate,includingafirstrowregionandasecondrowregion,whereinthesurfaceofthesubstrateisarrangedinafirstdirectionandperpendiculartothefirst...
c2pampereobtainsverticalmetaloxidemonductorFieldEffectTransistor（MOSFET）和ITSFormation...FinancialIndustryNewsonNovember6,2024，fromThestateTateInteLlectPropertyOfficesHowshowshowshowshowshowshowsthatc2ampereco义务"，授权announoununununumbercn110574168b，applicationdateismay2018。
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ChangxinStorageappliesforpatentsfortransistors,semiconductorstructures,memoryandtheirformationmethods,providing...FinancialIndustryNewsonMarch29,2024,accordingtotheannouncementoftheStateIntellectualPropertyOffice,ChangxinStorageTechnologyCo.,Ltd.appliedforanameItis"transistor,semiconductorstructure,memoryandmethodforformingthesame",publicationnumberCN117790564A,andtheapplicationdateisSeptember2022. 专利showshowsthattheembodimentofthepresentdisclosureprovidesamethodandandstorageforformingtransistors，半导体结构，内存和症状导向器结构...
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≡(▔﹏▔)≡ JingfengMingyuanobtainspatentsforjunctionfieldeffecttransistorsandsemiconductordevicesonSeptember30,2024,informationfromtheStateIntellectualPropertyOfficeshowsthatShanghaiJingfengMingyuanSemiconductorCo.,Ltd.obtaineda"junction"Patentfortypefieldeffecttransistorsandsemiconductordevices,authorizationannouncementnumberCN113097309B,applicationdateisMarch2021.
changxinstorageobtainssmendoductorStoragePatentsfortransistorstructureandmanufacturingmethodshavebeenreduced...FinancialIndustryNewsonMarch27,2024,accordingtotheannouncementoftheStateIntellectualPropertyOffice,ChangxinStorageTechnologyCo.,Ltd.obtainedatransistorstructurecalled"SemiconductorStorage"anditsManufacturingmethod",authorizationannouncementnumberCN110299324B,applicationdateisMarch2018.Patentabstractshowsthatthepresentinventionproposesatransistorstructureofasemiconductormemoryandamanufacturingmethodthereof,whichincludes:formingonasubstrate...
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˙０˙ 上海jitasemiconductorAppliesFieldFieldFfieleFfieldExtistors，preginationMethodSandSandSssedSonductorDevicepatents...FinancialIndustryNewsonoctober29,2024，信息fromFromThestateEctualPropertyOfficesHowshowshowshowshowshowsthatshanghaijitasememememedondoctoritioninfortistioninfortistioninfortistortions.portersistrysistinfrieftrym'amptrym''''''''''''''EthodsandSandsemenductOddevices"，PublicationNumbercn118825074a，andtheapplicationDateSiSjuly2024。 ApareStoFieldectTransistor，AsporparationMethod，AsemicDuctOddevice，包括：基板，底物...
...Applyforpatentsforsemiconductorstructuresandproductionmethods,andsolvetheproblemoftransistorheightdifferenceinsemiconductorstructures.Thepresentdisclosurerelatestoasemiconductorstructureandproductionmethod,bycontrollingtheetchingendpointofthefirstdielectriclayerandcontrollingthegrindingThegrindingendpointoftheseconddielectriclayeristoremovetheseconddielectriclayeronthesecondtransistor,retainingtheseconddielectriclayeronthegatestructureofthefirsttransistorandthetopoftheseconddielectriclayeronthegatestructureofthefirsttransistorTheheightofthesurfaceisflushwiththetopsurfaceofthegatestructureofthesecondtransistor...
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HangzhouJihaiSemiconductorappliesforpatentsforfieldeffecttransistorsandtheirmanufacturingmethodstoimprovethedevicesformed...FinancialIndustryNewsonNovember22,2024,InformationfromtheStateIntellectualPropertyOfficeshowsthatHangzhouJihaiSemiconductorCo.,Ltd.appliesforaPatententitled"Field-effecttransistoranditsmanufacturingmethod"ispublishedNo.CN118983224A,andtheapplicationdateisOctober2024. PatentAbtractshowsshowsthatthatththatthatththatththatthatthefidesfidesefidefidefidefiideFieldEftEctRansistorandAnfucturingMethodThereof.inthemantufficringMethodefthefieldEffieldEffectTransistor，thefirstetchingingifirst...
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